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| savantic semiconductor product specification silicon npn power transistors BU508A d escription with to-3pn package high voltage high speed switching applications for use in horizontal deflection circuits of large screen colour tv receivers. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cm collector current (pulse) 15 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU508A c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v ce (sat) collector-emitter saturation voltage i c =4.5a; i b =2a 1.0 v v be (sat) base-emitter saturation voltage i c =4.5a; i b =2a 1.3 v i ces collector cut-off current v ce =1200v; v be =0 t c =125c 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 8 t s storage time 7 s t f fall time i c =4.5a ; v cc =140v i b =1.8a; l c =0.9mh l b =3h 0.55 s f t transition frequency i c =0.1a ; v ce =5v 7 mhz savantic semiconductor product specification 3 silicon npn power transistors BU508A package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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